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"Toshiba’s Newly Developed Fully Isolated N-channel LDMOS Realizes High HBM Robustness and High Breakdown Voltage to Negative Bias in 0.13-Micron Generation Analog Power Semiconductors"
"Toshiba’s Newly Developed Fully Isolated N-channel LDMOS Realizes High HBM Robustness and High Breakdown Voltage to Negative Bias in 0.13-Micron Generation Analog Power Semiconductors"
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