Launches 60V products with top class[1] low ON-resistance performance and high-speed switching
TOKYO — (BUSINESS WIRE) — June 28, 2013 — Toshiba Corporation (TOKYO:6502) today announced the addition of 60V voltage products to its power MOSFET line-up for general-purpose DC-DC converters used in base stations and servers. The products use the latest 8th generation low-voltage trench structure and achieve the highest class[1] of low ON-resistance and high-speed switching. Mass production starts from today.
SOP Advance package (left) and TSON Advance package (right) (Photo: Business Wire)
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Key Features |
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| 1. | Uses the 8th generation low-voltage trench structure and achieves top class[1] low ON-resistance | |
| 2. | Achieves low internal gate resistance and a low gate capacity ratio (Cgd/Cgs), which contributes to prevention of the self turn-on phenomenon. | |
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Main Specifications |
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| Package | Part Number |
VDSS (V) |
RDS(ON) (mΩ) |
Crss
|
Ciss
(Typ.) (pF) |
Coss
(Typ.) (pF) |
Qg
|
rg
(Typ.) (Ω) |
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| V GS =10V | V GS =4.5V | |||||||||||||||||||||
| Typ. | Max | Typ. | Max | |||||||||||||||||||
| TSON Advance | TPN11006NL | 60 | 9.6 | 11.4 | 12.8 | 17 | 23 | 1500 | 350 | 23 | 0.6 | |||||||||||
| SOP Advance | TPH11006NL | 60 | 9.6 | 11.4 | 12.8 | 17 | 23 | 1500 | 350 | 23 | 0.6 | |||||||||||
