Reduces On-Resistance by approximately 24%
TOKYO — (BUSINESS WIRE) — July 21, 2013 — Toshiba Corporation (TOKYO:6502) today announced that it has launched a new series of high voltage MOSFETs, "πMOS VIII" series, and introduced "TK9J90E" as the initial product of the series. Mass production is scheduled to start in August, 2013.
Toshiba's high voltage MOSFET, "TK9J90E". (Photo: Business Wire)
Optimization of chip design reduces Ron·A (on resistance per area) by approximately 24% compared to a product1 with an equivalent voltage. Reduction of Qg (gate charge) performance by approximately 24% improves turn off time (toff) by approximately 28%.
|
Main Specifications |
||||||||||||
| Part Number | Package | Absolute Maximum Ratings | RDS(ON) Max (Ω) |
Qg Typ.
(nC) |
Ciss Typ.
(pF) |
|||||||
| VDSS (V) | ID (A) | VGS=10V | ||||||||||
| TK9J90E | TO-3P(N) | 900 | 9 | 1.3 | 46 | 2000 | ||||||
