Simple to drive; suit load switches
Sept 2013, San Jose, CA -- Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors and ICs for DC-DC power conversion applications, has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.
Combining fast switching, low on-resistance and cost-effectiveness, the AP2325GEU6-HF-3 is simple to use and has a low gate charge. It features a minimum Drain-Source Breakdown Voltage (BVDSS) of -20V, maximum RDS(ON) of 145mohms, and a maximum Continuous Drain Current (ID) at 25degC of -1.8A.
Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “These Advanced Power MOSFETs are available in the popular RoHS/REACH-compliant, halogen-free SOT-363 ultra-small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.”
More data is available at http://www.a-powerusa.com/docs/AP2325GEU6-3.pdf.
About Advanced Power Electronics Corp.
Established in Taiwan in 1998, Advanced Power Electronics Corporation has become a leading supplier of MOS power discretes, IGBTs and Power ICs which enable cost-effective efficient solutions for new and existing power applications. The company’s wide range of solutions broadly targets the computing, consumer electronics, display, communications and industrial segments. ISO-approved, Advanced Power Electronics Corp.’s commitment to consistent quality assurance and the increased economies of scale has seen the company increase in revenue - trading profitably each year since its foundation - and it has been ranked as one of the world's top fifteen power MOSFET suppliers by iSuppli.
Contact:
Ralph Waggitt,
President/CEO,
Advanced Power Electronics Corp. (USA),
Tel: +1 408-717-4231
Email:
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http://www.a-powerusa.com
Nick Foot
BWW Communications
Tel.: +44 1491-636393
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