Broadband Transistor Delivers 55% Efficiency with 50 V Operation over DC-3500 MHz Frequency Range
LOWELL, Mass. — (BUSINESS WIRE) — April 28, 2014 — M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, today announced a new GaN on SiC HEMT Pulsed Power Transistor for civilian and military radar pulsed applications.
The MAGX-000035-045000 is a gold-metalized unmatched GaN on Silicon Carbide RF power transistor optimized for high performance RF applications such as L-Band and S-Band radar. MAGX-000035-045000 provides a typical 55 W of peak output power with 11 dB of power gain and 55% efficiency. The device is assembled using state of the art design and packaging assembly in a Cu/Mo/Cu flanged ceramic package, which enables the customer to reach higher power and efficiency for today’s demanding applications.
“The new GaN power transistor offers a versatile and high performance solution for pulsed driver and power applications over a broad frequency range,” said Paul Beasly, Product Manager. “The device is a clear leader in S-Band applications with 55 Wpk power and 55% efficiency in a small 20.3 x 5.8 mm flanged ceramic package.”
Operating between the DC-3500 MHz frequency range, the MAGX-000035-045000 is a highly robust transistor with high voltage breakdown and boasting a mean time to failure (MTTF) of 600 years.
The table below outlines typical performance:
| Parameters | Units | |||||||||||
| Frequency | MHz | DC-3500 | ||||||||||
| Pout | W | 55 | ||||||||||
| Power Gain | dB | 11.3 | ||||||||||
| Power Added Efficiency | % | 55 | ||||||||||
| Voltage Operation | V | 50 | ||||||||||
| Load Mismatch Stability | VSWR-S | 5:1 | ||||||||||
| Load Mismatch Tolerance | VSWR-T | 10:1 | ||||||||||
