KIRKLAND, Wash., Sept. 08, 2022 (GLOBE NEWSWIRE) -- Alliance Memory today announced that it has expanded its portfolio of CMOS DDR4 SDRAMs with new “A” die versions of the 4Gb AS4C256M16D4A and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively. Built on a finer process that results in a smaller chip than the original, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost. In addition, Alliance Memory is continuing its partnership with Micron Technology and offering the company’s MT40A1G16KH-062E DDR4 SDRAM to provide customers with a 16Gb option.

To increase battery life in portable electronics such as smartphones and tablets, the Alliance Memory devices released today feature low operating voltages of +1.2V (±0.06V). The DDR4s are designed, qualified, and recommended for use in 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, PNDs, and more. Built on a new process technology, the new devices offer fast clock speeds up to 1600MHz and transfer rates up to 3200Mbps.

The AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.

With minimal die shrinks, Alliance Memory’s DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges, the new “A” die devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity.

The addition of Micron Technology’s MT40A1G16KH-062E to Alliance Memory’s offering of DDR4 SDRAMs provides the company’s customers with access to a 16Gb device for a wide range of applications. Operating from a +1.2V power supply over a commercial temperature range, the 1Gb x 16-bit device is built on an 8n-prefetch architecture for high data rates of 3200 MT/s. The MT40A1G16KH-062E supports read or write burst lengths of BC4 or BL8 on the fly.

Device Specification Table: