Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss

KAWASAKI, Japan — (BUSINESS WIRE) — August 30, 2023Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched silicon carbide (SiC) MOSFETs, the "TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest[1] 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20230830606116/en/

Toshiba: 3rd generation SiC MOSFETs for industrial equipment with four-pin package that reduces switching loss. (Graphic: Business Wire)

Toshiba: 3rd generation SiC MOSFETs for industrial equipment with four-pin package that reduces switching loss. (Graphic: Business Wire)

The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%[2], compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.

A reference design for a three-phase inverter using SiC MOSFETs is published online.

Toshiba will continue to expand its line-up to meet market trends and contribute to improving equipment efficiency and enlarging power capacity.

Notes:
[1] As of August 2023.
[2] As of August 2023, values measured by Toshiba (test condition: VDD=800V, VGG=+18V/0V, ID=20A, RG=4.7Ω, L=100μH, Ta=25°C)

Applications

  • Switching power supplies (servers, data centers, communications equipment, etc.)
  • EV charging stations
  • Photovoltaic inverters
  • Uninterruptible power supplies (UPS)

Features

  • Four-pins TO-247-4L(X) package:
    Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive
  • 3rd generation SiC MOSFETs
  • Low drain-source On-resistance x gate-drain charge
  • Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V)

Main Specifications

(Ta=25°C unless otherwise specified)

Part number

Package

Absolute maximum ratings

Electrical characteristics

Sample Check

&

Availability

Drain-

source

voltage

VDSS

(V)

Gate-

source

voltage

VGSS

(V)

Drain

current

(DC)

ID

(A)

Drain-

source

On-

resistance

RDS(ON)

(mΩ)

Gate

threshold

voltage

Vth

(V)

Total

gate

charge

Qg

(nC)

Gate-

drain

charge

Qgd

(nC)

Input

capacitance

Ciss

(pF)

Diode

forward

voltage

VDSF

(V)

Tc=25°C

VGS=18V

VDS=10V

VGS=18V

VGS=18V

typ.

Test

condition

VDS

(V)

VGS=-5V

typ.

typ.

typ.

typ.

TW015Z120C

TO-247-4L(X)

1200

-10 to 25

100

15

3.0 to 5.0

158

23

6000

800

-1.35

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TW030Z120C

60

30

82

13

2925

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TW045Z120C

40

45

57

8.9

1969

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TW060Z120C

36

60

46

7.8

1530

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TW140Z120C

20

140

24

4.2

691

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TW015Z65C

650

100

15

128

19

4850

400

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TW027Z65C

58

27

65

10

2288

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TW048Z65C

40

48

41

6.2

1362

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TW083Z65C

30

83

28

3.9

873

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TW107Z65C

20

107

21

2.3

600

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