Active clamp structure prevents overvoltage when inductive load is switched off
TOKYO — (BUSINESS WIRE) — June 21, 2013 —
Toshiba
Corporation (TOKYO: 6502) today announced that it has launched a
MOSFET, "SSM3K337R", for relay drivers. The new device uses an active
clamp structure that prevents overvoltage when the inductive load of
relay devices is switched off. Sample is available and mass production
is scheduled to start in September.
Demand for relay drivers is
growing for automobile, since the number of electric components equipped
by automobile is increasing.
The "SSM3K337R" reduces ON-resistance
by half and improves allowable power dissipation to approximately 1.6
times that of equivalent products.
Toshiba: MOSFET for Relay Drivers (Photo: Business Wire)
| Key Features | ||
| 1. | Active clamp structure reduces stress by inductive load of relay devices. | |
| 2. | ON-resistance is reduced by half. | |
| 3. | Allowable power dissipation is improved to approximately 1.6 times, with SOT-23F package. | |
|
Main Specifications |
||||||||||||||||||
| Package | Part Number |
VDSS
(V) |
VGSS
(V) |
ID(DC)
(A) |
RDS(ON) typ. (mΩ) |
Ciss
(pF) |
Qg
@2A (nC) |
|||||||||||
|
V GS =4V |
V GS =4.5V |
V GS =10V |
||||||||||||||||
|
SOT-23F
2.9 x 2.8mm |
SSM3K337R | 38 | ±20 | 2 | 161 | 155 | 135 | 120 | 3.6 | |||||||||
