Low On-resistance Reduces Conduction Loss in Mobile Equipment
TOKYO — (BUSINESS WIRE) — July 10, 2013 — Toshiba Corporation (TOKYO:6502) today announced that it has expanded its line-up of low voltage N-channel MOSFETs, used in protection circuits for lithium ion batteries and the power management switches of mobile equipment, with the "TPN2R203NC". Fabricated with eighth generation process, TPN2R203NC realizes low ON-resistance, which reduces conduction loss in equipment.
Toshiba Low Voltage N-channel MOSFET "TPN2R203NC" (Photo: Business Wire)
| Key Features | ||
| 1. |
Eighth generation process realizes low ON-resistance. |
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| 2. | TSON Advance package with good thermal conductivity. | |
| 3. | High avalanche resistance. | |
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Main specifications |
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| Part Number | Package | VDSS (V) | RDS(ON) (mΩ) | |||||||||
| VGS=10V | VGS=4.5V | |||||||||||
| Typ. | Max | Typ. | Max | |||||||||
| TPN2R203NC | TSON Advance | 30 | 1.8 | 2.2 | 2.8 | 3.6 | ||||||
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