GaN in Plastic Transistor Equips Radar and Communications System Designers with 10 W of CW power in Surface Mount Package
LOWELL, Mass. — (BUSINESS WIRE) — March 6, 2014 — M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of high performance RF, microwave, and millimeter wave products, introduced today its newest addition to the GaN in Plastic series. The wideband packaged GaN power transistor is ideal for high-performance civilian and military radar and communications systems. The MAGX-000035-01000P is a 10 W GaN on SiC unmatched power transistor, which offers broad RF frequency capability, reliable high voltage operation, and smallest footprint in plastic-packaging technology. The surface mount technology enables faster time-to-market through the use of high volume commercial, surface mount assembly methods.
Packaged in miniature 3 x 6 mm DFN and 14-Lead DFN package, the MAGX-000035-01000P operates from DC-3.5 GHz and leverages thermal management techniques to ensure excellent reliability in true surface mount applications. The device also operates at 50 V drain bias resulting in outstanding power density performance, higher efficiency, and smaller impedance matching circuits due to improved device parasitics. The high voltage operation also benefits overall system design with smaller energy storage capacitors and lower current draw. The device can operate in pulsed and CW modes and maintains a calculated mean-time-to-failure (MTTF) at 200 deg C of roughly 600 years.
“MACOM’s 10 W GaN in Plastic power transistor offers both pulsed and CW modes of operation making it a highly versatile driver or final power stage for multiple applications,” said Paul Beasly, Product Manager. “Furthermore, the device has been thermally designed to operate with standard surface-mount assembly which significantly simplifies the design and implementation into higher level systems.”
The table below outlines typical performance:
| Parameters | Units | MAGX-000035-01000P | ||||||
| Frequency | GHz | DC-3.5 | ||||||
|
Pout
Power Gain PAE @ 1GHz |
W
dB % |
10
15 58 |
||||||
| Bias Voltage | V | 50 | ||||||
| Package | mm | 3x6 DFN |
GaN in Plastic test fixtures are available upon request. Final datasheets and additional product information can be obtained from MACOM’s GaN microsite at: www.macom.com/gan.
About MACOM
M/A-COM Technology Solutions Holdings, Inc. ( www.macom.com) is a leading supplier of high performance analog RF, microwave, and millimeter wave products that enable next-generation Internet and modern battlefield applications. Recognized for its broad catalog portfolio of technologies and products, MACOM serves diverse markets, including high speed optical, satellite, radar, wired & wireless networks, CATV, automotive, industrial, medical, and mobile devices. A pillar of the semiconductor industry, we thrive on more than 60 years of solving our customers' most complex problems, serving as a true partner for applications ranging from RF to Light.
Headquartered in Lowell, Massachusetts, MACOM is certified to the ISO9001 international quality standard and ISO14001 environmental management standard. MACOM has design centers and sales offices throughout North America, Europe, Asia and Australia.
MACOM, M/A-COM, M/A-COM Technology Solutions, M/A-COM Tech, Partners in RF & Microwave, Partners from RF to Light, The First Name in Microwave and related logos are trademarks of MACOM. All other trademarks are the property of their respective owners.
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