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Efficient Power Conversion (EPC) Experts to Demonstrate How eGaN FETs Increase Efficiency by 20% in Wireless Power Applications at Key Power Industry Conferences in Asia

EPC experts will be making technical presentations on GaN FET technology at three industry-leading conferences in Asia Electronica China, IIC China Power Management and Semiconductor and International Workshop on Wide Band Gap Power Electronics 2014 in Taiwan

EL SEGUNDO, Calif. — (BUSINESS WIRE) — March 12, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors, will be making presentations at three industry-leading power conferences in Asia.

At two conferences in Shanghai, China on March 18th, EPC technical experts will be presenting how gallium nitride (GaN) power devices have emerged as higher efficiency replacements for the aging silicon (Si) power MOSFETs. Specifically, increases in performance offered by eGaN FETs in wireless power transfer (WiPo) applications will be presented. Examples of increased performances include a new power conversion design that delivers up to 20% improvement in efficiency and a second design delivering up to 30 W operating with loosely coupled coils in the 6.78 MHz ISM band.

On April 10, EPC’s CEO and Co-founder Dr. Alex Lidow will be giving an update on GaN technology entitled, "Crushing Silicon with GaN." This presentation will highlight key new applications, latest products on the market, latest road maps into the future, and the relative competitive position of GaN with the power MOSFET and silicon carbide.

Summary of Upcoming EPC Conferences in Asia:

 

  Electronica China
Date:   March 18, 2014
Title:

"Improving Wireless Energy Transfer Performance with eGaN® FET-based Converter"

Presenters: Dr. Michael de Rooij, Executive Director of Application Engineering
Peter Cheng, Director of FAE for Asia
 

IIC Spring Conference, Power Management and Semiconductor
Date: March 18, 2014
Title:

"Improving Wireless Energy Transfer Performance with eGaN® FET-based Converter"

Presenters: Dr. Michael de Rooij, Executive Director of Application Engineering
Peter Cheng, Director of FAE for Asia
 

International Workshop on Wide Band Gap Power Electronics 2014 (IWWPE)
Date:

April 10, 2014

Title: “Crushing Silicon with GaN”
Presenter:

Dr. Alex Lidow, EPC CEO and Co-founder

 

“These three key Asian industry conferences provide EPC an opportunity to meet with practicing power system design engineers and share the attributes of GaN technology and how eGaN FETs can increase performance and efficiencies in their power system designs,” said Alex Lidow.

About Electronica China 2014

Electronica China is the leading trade platform for electronic components and systems in China and Asia Pacific. Growth of a decade has established Electronica China a name for its "high-end applications and technological innovations." A series of international innovation forums addressing important application trends and growth markets offer the electronic communities in China the latest industry trends and solutions. Visit www.epc-co.com.cn or http://www.electronicachina.com.cn/cn/forum/overview/1005.html.

About IIC China – Spring Conference 2014

IIC-China is the country’s annual systems design event where engineers, technology vendors and new ideas meet. On its 19th year, the event brings you face-to-face with China’s design innovators as they look for new technology and design ideas. The Power Management and Semiconductor Conference will serve as educational opportunity for engineers on hot topics and emerging technologies. Visit www.epc-co.com.cn or http://www.fair.iic-china.com/iicc/CONVISTR/2014spring-power.HTM.

About Wide Band Gap Power Electronics Consortium

Established in 2011, the Consortium aims to integrate industry enterprises relating to Wide Band Gap power electronics technology, give impetus to technical exchanges and cooperation, and to promote resources integration of power electronics industry and industrialization. International Workshop on WBG Power Electronics (IWWPE) aims to build a platform for sharing experiences, opinions and expectations in this field. In this workshop a dozen of experts on power electronics Technology Trend/Application, Device/Fabrication, Package/Reliability, Materials/Equipment, and vendors for the WBG power electronics will be invited to give lectures. Visit www.epc-co.com.tw or http://wpec.org.tw/Industry/.

About EPC

EPC is the leader in enhancement-mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.



Contact:

Efficient Power Conversion
Joe Engle, 310.986.0350
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