Instrument Characterizes All Power Device Parameters, Such as Ron, Leakage, Ciss, Coss, Crss and Gate Charge
SANTA CLARA, Calif. — (BUSINESS WIRE) — May 1, 2014 — Agilent Technologies Inc. (NYSE: A) today introduced the industry’s first power device analyzer for circuit design. The Agilent B1506A is a single-box solution that automatically characterizes all power device parameters across a wide range of operating conditions and temperatures (-50 °C to +250 °C), at up to 1500 amps and 3 kV.
Circuit designers employ power devices in a wide range of products, therefore requiring an accurate, thorough understanding of their performance over a wide range of conditions. However, power device data sheets typically show behavior across only a limited range of operating conditions, and obtaining key datasheet parameters is not a straightforward process. By providing an automated, easy-to-use way to extract power device parameters, Agilent’s B1506A Power Device Analyzer for Circuit Design is well equipped to overcome these challenges.
The B1506A measures and evaluates all kinds of parameters, including IV parameters (e.g., breakdown voltage and on-resistance); three terminal capacitances (Ciss, Coss and Crss) with high-voltage bias; gate charge; switching time; and power losses. It also provides a fully automated measurement of temperature dependency for all parameters, from -50ºC to +250 ºC, and seamlessly integrates with Thermal Plate or Thermostream from inTest Corp. An intuitive GUI makes it easy for even a novice user to extract critical device parameters across a wide range of current, voltage and temperature conditions. Such capabilities make the B1506A ideal for helping designers select the right power devices for their power electronic circuits, and for power electronics manufacturers conducting incoming device inspection and failure analysis.
“While the power devices used in power electronics circuits are key to meeting industry requirements for low power loss and high switching frequency, until now no suitable solution has existed for evaluating all of the characteristics of those devices,” said Masaki Yamamoto, general manager of Agilent’s Hachioji Semiconductor Test Division. “The B1506A promises to fill this gap by providing complete characterization for those key power devices in an automated fashion.”
Some of the key features of the B1506A Power Device Analyzer include:
- Measurement of all IV parameters (Ron, BV, Leakage, Vth, Vsat, etc.), and transistor input, output and reverse transfer capacitances (Ciss, Coss, Crss, Cies, Coes, Cres, Rg) at high-voltage biases.
- Qg curve measurement.
- Thermal test capability (-50 °C to +250 °C).
- Power loss (conduction, driving and switching) evaluation.
- Oscilloscope view that supports visual verification of pulsed measurement waveforms for checking real operating bias/timing point.
- Unique software interface that simulates device data sheet framework, providing an intuitive and fully automated measurement environment that anyone can use with no training required.
U.S. Pricing and Availability
The Agilent B1506A Power Device Analyzer may be ordered starting July 1. Three models are available—Opt. H21 (20 A), Opt. H51 (500 A) and Opt. H71 (1500 A)—with pricing from $120,000 to $160,000.
More information is available at www.agilent.com/find/B1506A. A product image is available at www.agilent.com/find/B1506A_images.
About Agilent Technologies
Agilent Technologies Inc. (NYSE: A) is the world’s premier measurement company and a technology leader in chemical analysis, life sciences, diagnostics, electronics and communications. The company’s 20,600 employees serve customers in more than 100 countries. Agilent had revenues of $6.8 billion in fiscal 2013. Information about Agilent is available at www.agilent.com.
On Sept. 19, 2013, Agilent announced plans to separate into two publicly traded companies through a tax-free spinoff of its electronic measurement business. The new company is named Keysight Technologies, Inc. The separation is expected to be completed in early November 2014.
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