Samples of the 8th-generation IGBTs are available now. System manufacturers can select the product version that best matches the inverter circuit type and required output capacity. Pricing varies per product version, for example, samples of the RBN50H65T1GPQ-A0 650 V/50 A product version are priced at US$3.00 per unit. Mass production is scheduled to begin in September 2016 and is expected to reach a volume of 600,000 units per month by March 2017. (Pricing and availability are subject to change without notice.)
For more information on Renesas, follow Renesas Electronics America at @RenesasAmerica on Twitter and http://www.facebook.com/RenesasAmerica.
Refer to the separate sheet for the main specifications of the new 8th-generation IGBTs.
(Note 1) The trench gate configuration involves the formation of deep, narrow grooves (trenches) in the chip surface, followed by the formation of MOSFET gates on the sides of the trenches. This permits a higher cell density and contributes to lower on-resistance.
(Note 2) The saturation voltage (Vce (sat)) is the most important index of IGBT performance. It indicates the voltage between the collector and emitter in the operating state. The lower the value, the less the conduction loss when current is flowing to the element.
(Note 3) The performance index represents switching loss × Vce (sat).
About Renesas Electronics Corporation
Renesas Electronics Corporation (TSE: 6723), the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad-range of analog and power devices. Business operations began as Renesas Electronics in April 2010 through the integration of NEC Electronics Corporation (TSE:6723) and Renesas Technology Corp., with operations spanning research, development, design and manufacturing for a wide range of applications. Headquartered in Japan, Renesas Electronics has subsidiaries in 20 countries worldwide. More information can be found at www.renesas.com.
Separate Summary Sheet
Product Specifications of the 8th-Generation G8H IGBT Series
|
650V products |
|||||||
| Item | Specifications | ||||||
| Renesas Part No. |
RBN40H65T1GPQ-A0 (40A)
RBN50H65T1GPQ-A0 (50A) RBN75H65T1GPQ-A0 (75A) |
||||||
| Order Part No. |
RBN40H65T1GPQ-A0#T2
RBN50H65T1GPQ-A0#T2 RBN75H65T1GPQ-A0#T2 |
||||||
| Collector to emitter voltage VCES | 650 V | ||||||
| Gate to emitter voltage VGES | +/- 30 V | ||||||
| Collector current IC | Tc = 25 °C | 80 A, 100A, 150A | |||||
| Tc = 100 °C | 40 A, 50A, 75A | ||||||
| Junction temperature Tj | 175 °C | ||||||
| Collector to emitter saturation voltage VCE(sat) | 1.5 V | ||||||
|
Gate to emitter cutoff voltage VGE (off) |
5.0 - 6.8 V |
||||||
| Package Information | TO-247 | ||||||
|
1250V products |
||||||||
| Item | Specifications | |||||||
| Renesas Part Name |
RBN25H125S1GPQ-A0 (25A)
RBN40H125S1GPQ-A0 (40A) RBN75H125S1GP4-A0 (75A) |
|||||||
| Order Part Name |
RBN25H125S1GPQ-A0#T2
RBN40H125S1GPQ-A0#T2 RBN75H125S1GP4-A0#T2 |
|||||||
| Collector to emitter voltage VCES | 1250 V | |||||||
| Gate to emitter voltage VGES | +/- 30 V | |||||||
| Collector current IC | Tc = 25 °C | 50 A, 80A, 150A | ||||||
| Tc = 100 °C | 25 A, 40A | 75A | ||||||
| Junction temperature Tj | 175 °C | |||||||
| Collector to emitter saturation voltage VCE(sat) | 2.1 V | |||||||
|
Gate to emitter cutoff voltage VGE (off) |
5.0 - 6.8 V | |||||||
| Package Information | TO-247 | TO-247 plus | ||||||
