LOWELL, Mass. — (BUSINESS WIRE) — May 10, 2017 — MACOM Technology Solutions Inc. (“MACOM”), will showcase its industry leading GaN on Silicon portfolio and other high-performance MMIC and Diode products at IEEE’s International Microwave Symposium (IMS) 2017 in Honolulu, Hawaii, June 6 - 8. MACOM’s booth will feature new product solutions optimized for commercial, industrial, scientific and medical RF applications.

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MACOM will showcase its industry leading GaN on Silicon portfolio and other high-performance MMIC and Diode products at IEEE’s International Microwave Symposium (IMS) 2017 in Honolulu, Hawaii, June 6 - 8. MACOM’s booth will feature new product solutions optimized for commercial, industrial, scientific and medical RF applications. (Graphic: Business Wire)

Visit Booth #1312 to meet with MACOM experts and learn more about:

• Enabling Basestations: Cutting-edge GaN 60 W average Power Doherty module
• RF Energy: MACOM’s Beta Toolkit enabling RF energy applications
• MACOM’s High Power GaN on Si Portfolio: Delivering performance and reliability for rugged Aerospace and Defense Applications
• E-Band Solutions: Demonstrating MACOM’s E-Band ½ W Power Amplifier, along with a display of the new E-band Tx and Rx SMD Modules and the portfolio of other wideband millimeterwave products addressing the emerging 5G access, connectivity and backhaul markets.
• The Trusted Name in High-Performance Diodes: Industry-leading diode design and application-specific solutions
• Wideband Voltage Controlled Oscillators: Demonstrating leading performance and functionality of MACOM's new platform of wideband VCOs, octave band operation, low phase noise, stable power over temperature and improved sensitivity for Test and Measurement, A&D and ISM applications
• Wideband Power Amplifier MMIC: High-performance TWA Power amplifier covering DC -50 GHz
• Hi-Rel and Component Devices: The latest screened products for mission critical space and aerospace applications

Members of MACOM’s product management, engineering and applications teams will be available at Booth #1312 to answer any inquiries or questions. MACOM experts will also be participating in various sessions throughout IMS, including:

• Technical Session: TU3E-3: Extraction of a Trapping Model Over an Extended Bias Range for GaN and GaAs HEMTs
  • Date: Tuesday, 6 June 2017
  • Time: 14:10-14:30 HST
  • Location: Room 314
• Microapps: AlGaAs PIN Diodes and HMIC Integration Create High-Performance mmWave Switch Solutions
  • Date: Tuesday, 6 June 2017
  • Time: 16:00 HST
  • Location: Exhibition Floor, Booth 1946
• Microapps: Integrated PIN Diode Switches Offer Improved Performance with Lower DC Power
  • Date: Wednesday, 7 June 2017
  • Time: 11:40 HST
  • Location: Exhibition Floor, Booth 1946

Show Information:
Exhibition Hall: Hawaii Convention Center, Honolulu, HI

• Tuesday, June 6^th: 9:30 AM – 5:00 PM HST
• Wednesday, June 7^th: 9:30 AM – 6:00 PM HST
• Thursday, June 8^th: 9:30 AM – 3:00 PM HST