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Spin Transfer Technologies to Discuss MRAM’s Progression to Replace Embedded SRAM Applications and Development as a Storage Class Memory at MRAM Developer Day and Flash Memory Summit

(BUSINESS WIRE) — August 6, 2018 — Spin Transfer Technologies, Inc. (STT) will have several executive spokespeople chairing, presenting and participating in a number of sessions at the MRAM Developer Day and the Flash Memory Summit. STT is the leading developer of advanced STT-MRAM solutions for embedded SRAM and stand-alone DRAM applications.

MRAM Developer Day:

 

At MRAM Developer Day, STT will be participating in two sessions: MRAM Application Briefs and MRAM in 2024 and How We Got There. During both sessions, STT executives will discuss how the data demand of new technologies combined with the pressing limitations of existing solid state memories is leading to the rise of pioneering replacement memories – including MRAM. Though MRAM has long been plagued with serious deficiencies regarding performance, retention and endurance, new innovations have solved these issues. For both sessions, STT’s Vice President of Product, Dr. Andrew Walker, will address MRAM’s current positioning to become the mainstream memory solution to supplant embedded SRAM and how MRAM will proceed towards DRAM replacement and new forms of Storage Class Memory.

 
SESSION DETAILS:

Title: MRAM Application Briefs
Date: Monday, August 6th, 2018, 2-3:15 p.m. PT
Location: Great America Meeting Room 1
Chairperson: Jeff Lewis, SVP of Business Development, Spin Transfer Technologies
Paper Presenter: Andrew Walker, VP of Product, Spin Transfer Technologies, The Magnetic Migration into the Memory Hierarchy


Title: Panel on MRAM in 2024 and How We Got There
Date: Monday, August 6th, 2018, 5-6 p.m. PT
Location: Great America Meeting Room 2
Chairperson: Satoru Araki, Senior Director of Program/Product Management, Spin Transfer Technologies
Panel Member: Andrew Walker, VP of Product, Spin Transfer Technologies

 

WHERE:

Santa Clara Convention Center
5001 Great America Parkway
Santa Clara, CA, USA

 
 
Flash Memory Summit: During Flash Memory Summit, STT will participate in two separate tracks at the show: MRAM (New Memory Technologies Track) and Breaking Through Impenetrable Barriers (History Track). Dr. Walker will speak on developments in semiconductor storage technology that have led to the current state of the memory market and recent advancements in MRAM technology to improve its speed and endurance to levels competitive with SRAM and DRAM solutions. Dr. Walker will also discuss the origins of current market implementations of NVM, the rise of 3D NAND flash, and the development of alternative memories, such as MRAM, aimed at replacing embedded SRAM.
 
SESSION DETAILS:

Title: NEWM-202B-1: MRAM (New Memory Technologies Track)
Date: Wednesday, August 8, 2018, 4:40–5:45 p.m. PT
Location: Ballroom C
Panel Member: Andrew Walker, VP of Product, Spin Transfer Technologies, The Engine: SRAM/DRAM Endurance and Speed with STT-MRAM


Title: HIST-301B-1: Breaking Through Impenetrable Barriers (History Track)
Date: Thursday, August 9, 2018, 9:45–10:50 a.m. PT
Location: Ballroom G
Paper Presenter: Andrew Walker, VP of Product, Spin Transfer Technologies, Breaking through Impenetrable Barriers - The Key to the Evolution of Solid State

 

WHERE:

Santa Clara Convention Center
5001 Great America Parkway
Santa Clara, CA, USA

 

About Spin Transfer Technologies

Spin Transfer Technologies, Inc. develops STT-MRAM technologies that combine advanced magnetics technologies, circuits and memory architectures to create the industry’s lowest-cost, highest-performance STT-MRAM memories. The company’s disruptive STT-MRAM solutions aim to replace embedded SRAM and DRAM. The company was established by Allied Minds and New York University. For more information, please visit www.spintransfer.com.


Contact:

The Hoffman Agency
Justin Gillespie, 925-719-1097