Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment

KAWASAKI, Japan — (BUSINESS WIRE) — September 24, 2024Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added the “TRSxxx120Hx Series” of 1200V products to its lineup of third-generation silicon carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, such as photovoltaic inverters, EV charging stations and switching power supplies. Toshiba today started shipments of the ten new products in the series, five in a TO-247-2L package and five in a TO-247 package.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20240924320459/en/

Toshiba: 1200V third-generation SiC Schottky barrier diodes. (Graphic: Business Wire)

Toshiba: 1200V third-generation SiC Schottky barrier diodes. (Graphic: Business Wire)

The new TRSxxx120Hx Series are 1200V products that use the improved junction-barrier Schottky (JBS) structure[1] of Toshiba’s third-generation 650V SiC SBD. Use of a new metal in the junction barrier allows the new products to achieve industry-leading [2] low forward voltage of 1.27V (typ.), low total capacitive charge and low reverse current. This significantly reduces equipment power loss in more higher power applications.

Toshiba will continue to expand its SiC power device lineup, and to focus on improving efficiency that reduces power loss in industrial power equipment.

Notes:
[1] Improved JBS Structure: A structure that incorporates the Merged PiN Schottky (MPS) structure, which reduces forward voltage at high currents, into the JBS structure, which lowers the electric field at the Schottky interface and reduces current leakage.
[2] Among 1200V SiC SBDs. As of September 2024, Toshiba survey.

Applications

  • Photovoltaic inverters
  • EV charging stations
  • Switching power supplies for industrial equipment, UPS

Features

  • Third-generation 1200 V SiC SBD
  • Industry-leading[2] low forward voltage: VF=1.27V (typ.) (IF=IF(DC))
  • Low total capacitive charge: QC=109nC (typ.) (VR=800V, f=1MHz) for TRS20H120H
  • Low reverse current: IR=2.0μA (typ.) (VR=1200V) for TRS20H120H

Main Specifications

(Unless otherwise specified, Ta =25°C)

Part number

Package

Absolute maximum ratings

Electrical characteristics

Sample Check &

Availability

Repetitive peak reverse

voltage

VRRM

(V)

Forward

DC

current

IF(DC)

(A)

Non-repetitive

peak forward

surge current

IFSM

(A)

Forward voltage

(pulse measurement)

VF

(V)

Reverse current

(pulse measurement)

IR

(μA)

Total capacitive charge

QC

(nC)

 

Temperature conditions

Tc

(°C)

f=50Hz

(half-sine wave, t=10ms),

Tc=25°C

IF=IF(DC)

VR=1200V

VR=800V, f=1MHz

Typ.

Typ.

Typ.

TRS10H120H

TO-247-2L

1200

10

160

80

1.27

1.0

61

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TRS15H120H

15

157

110

1.4

89

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TRS20H120H

20

155

140

2.0

109

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TRS30H120H

30

150

210

2.8

162

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TRS40H120H

40

147

270

3.6

220

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TRS10N120HB

TO-247

5 (Per leg)

10 (Both legs)

160

40 (Per leg)

80 (Both legs)

1.27

(Per leg)

0.5

(Per leg)

30

(Per leg)

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TRS15N120HB

7.5 (Per leg)

15 (Both legs)

157

55 (Per leg)

110 (Both legs)

0.7

(Per leg)

43

(Per leg)

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TRS20N120HB

10 (Per leg)

20 (Both legs)

155

70 (Per leg)

140 (Both legs)

1.0

(Per leg)

57

(Per leg)

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TRS30N120HB

15 (Per leg)

30 (Both legs)

150

105 (Per leg)

210 (Both legs)

1.4

(Per leg)

80

(Per leg)

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TRS40N120HB

20 (Per leg)

40 (Both legs)

147

135 (Per leg)

270 (Both legs)

1.8

(Per leg)

108

(Per leg)

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