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Mr. Maia brings more than 25 years of experience to MoSys. Prior to joining the company, he was co-founder, vice president and general manager of PortalPlayer, which pioneered hard disk drive-based and high capacity flash-based portable media players. Mr. Maia was responsible for worldwide sales and marketing of PortalPlayer's semiconductor, firmware and software solutions. Previously, he was senior director of marketing at National Semiconductor Corp., vice president of marketing at Cirrus Logic, Inc., and served in various capacities at Trident Microsystems, including vice president of sales and marketing.
Mr. Maia holds a bachelor of science degree in marketing from San Francisco State University and a master's degree in business administration from St. Mary's College.
"Michael is a seasoned business executive with extensive global experience in the semiconductor industry," said Chet Silvestri, President and CEO of MoSys. "He has an enviable track record in business expansion, and we're pleased that he has agreed to join our team and help drive the growth of our business."
Mr. Maia was granted a stock option to purchase 250,000 shares of MoSys' common stock at an exercise price of $6.50, equal to MoSys' closing price on September 17, 2007 as a new employee hiring inducement option grant pursuant to NASDAQ Marketplace Rule 4350(i)(l)(A)(iv).
"This is an incredible opportunity to work with the world's largest wafer fabs, integrated device manufacturers (IDMs), and fabless semiconductor companies, which make such a significant impact on the consumer electronics and computing marketplaces," Maia said. "My goal is to continuously build new value for our customers by providing innovative intellectual property and system partitions."
ABOUT MOSYS, INC.
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory and analog/mixed-signal technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 110 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
1T-SRAM and 1T-FLASH are registered trademarks of MoSys, Inc.
Sally Pedreiro Beverly Twing, Acct. Manager
MoSys, Inc. Shelton IR
Sunnyvale, CA +1 (972) 239-5119 x126
+1 (408) 731-1832
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Web site: http://www.mosys.com/