Micron's 512 Mb Mobile DRAM addresses the needs of today's most advanced mobile devices by delivering maximum clock speeds of up to 200MHz allowing the transfer of 400 Mbs of data per second. This industry-leading speed provides the additional bandwidth necessary to boost the operating capability of mobile applications, including running more functions simultaneously without performance issues or powering high speed video.
"The trend of full-featured mobile products that offer more audio, video and computing functionality only continues to grow, creating an increased demand for memory products that can support these advanced capabilities," said Bill Lauer, senior director of marketing for Micron's memory group. "With its industry-leading speed, small form factor and reduced power consumption, Micron's 512 Mb Mobile DRAM is ideal for meeting the requirements of today's handheld products."
In addition to meeting the JEDEC standard 1.8 volt input/output (I/O), the device is also available with a 1.2 volt I/O option that improves signaling for high-speed, high-bandwidth operation and is a key design requirement for next generation mobile chip sets. It also offers an extended operating temperature range from -40 degrees Celsius to +85 degrees Celsius making it optimal for products performing in extreme conditions. The company plans to assemble the 512 Mb Mobile DRAM with NAND flash and Managed NAND parts, and also intends to offer it in a multi-chip package or a package-on-package stack.
The 512 Mb Mobile DRAM chip joins Micron's broad family of innovative memory products for mobile applications that includes other Mobile DRAM parts, NAND Flash, Managed NAND, CellularRAM(TM) and Multichip Packages (MCP). Micron's mobile product line comes in a wide variety of form factors and densities to meet the diverse needs of the growing mobile market.
About Micron
Micron Technology, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, NAND flash memory, CMOS image sensors, other semiconductor components, and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron's common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com.
Micron and the Micron orbit logo are trademarks of Micron Technology, Inc. CellularRAM(TM) is a trademark of Micron Technology, Inc., inside the U.S. and a trademark of Qimonda Technologies outside the U.S. All other trademarks are the property of their respective owners.
This press release contains forward-looking statements regarding the production of 512 Mb Mobile DRAM memory. Actual events or results may differ materially from those contained in the forward-looking statements. Please refer to the documents the Company files on a consolidated basis from time to time with the Securities and Exchange Commission, specifically the Company's most recent Form 10-K and Form 10-Q. These documents contain and identify important factors that could cause the actual results for the Company on a consolidated basis to differ materially from those contained in our forward-looking statements (see Certain Factors). Although we believe that the expectations reflected in the forward-looking statements are reasonable, we cannot guarantee future results, levels of activity, performance or achievements. We are under no duty to update any of the forward-looking statements after the date of this press release to conform to actual results.
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